ED Series Equal Diameter Silicon Carbide Heating Rods
ED Series Equal Diameter Silicon Carbide Rods represent the next generation of high-performance non-metallic heating elements. Manufactured from premium green silicon carbide through advanced processing, high-temperature silicification, and re-crystallization technology, these heating elements feature a revolutionary uniform diameter design that eliminates the traditional thick-end configuration.
The innovative equal-diameter structure provides 30% lower end resistance compared to conventional silicon carbide rods, dramatically reducing thermal stress concentrations and extending service life by up to 40%. Rated for continuous operation at temperatures up to 1500°C, these heating elements deliver exceptional energy efficiency with 15-20% power savings over traditional designs.
Key Features & Benefits
- Uniform Diameter Design: Eliminates resistance concentration points
- Enhanced Durability: 40% longer service life than conventional SiC rods
- Superior Energy Efficiency: 15-20% reduced power consumption
- High-Temperature Performance: Reliable operation up to 1450°C
- Reduced Thermal Stress: Even heat distribution minimizes failure points
- Quick Thermal Response: Optimized heat transfer characteristics
Technical Specifications
- Maximum Operating Temperature: 1500°C
- Diameter Range: Standard and custom sizes available
- Power Savings: 15-20% compared to traditional SiC rods
- End Resistance: 30% lower than conventional designs
- Life Expectancy: 40% longer operational lifespan
These advanced heating elements are specifically engineered for industrial furnaces requiring precise temperature control, consistent performance, and reduced operating costs. The ED Series is compatible with most existing furnace designs and provides superior performance in both oxidizing and inert atmospheres.
Physical Properties of SiC Heating Elements
| Property |
Value |
Property |
Value |
| Specific Gravity |
2.6-2.8 g/cm³ |
Bend Strength |
>300 kg |
| Hardness |
>9 MOH'S |
Tensile Strength |
>150 kg/cm³ |
| Porosity Rate |
<30% |
Thermal Radiance |
0.85 |
Temperature-Dependent Properties of SiC Heating Elements
| Temperature (°C) |
Linear Expansion Coefficient (10⁻⁶m/°C) |
Thermal Conductivity (kcal/Mgr°C) |
Specific Heat (cal/g°C) |
| 0 |
/ |
/ |
0.148 |
| 300 |
3.8 |
/ |
/ |
| 400 |
/ |
/ |
0.255 |
| 600 |
4.3 |
14-18 |
/ |
| 800 |
/ |
/ |
0.294 |
| 900 |
4.5 |
/ |
/ |
| 1100 |
/ |
12-16 |
/ |
| 1200 |
4.8 |
/ |
0.325 |
| 1300 |
/ |
10-14 |
/ |
| 1500 |
5.2 |
/ |
/ |
Temperature and Surface Load Ratings for SiC Heating Elements by Atmosphere
| Atmosphere |
Furnace Temp (°C) |
Surface Load (W/cm²) |
Impact on the Element |
Solution |
| Ammonia |
1290 |
3.8 |
Acting on SiC to form thus decrease SiO₂ protective film |
Active at dew point |
| CO₂ |
1450 |
3.1 |
Erosion of elements |
Protecting by quartz tube |
| 18% CO |
1500 |
4.0 |
No action |
|
| 20% CO |
1370 |
3.8 |
Adsorbing C grains to act on SiO₂ protective film |
|
| Halogen |
704 |
3.8 |
Attacking SiC and decreasing SiO₂ protective film |
Protecting by quartz tube |
| Hydrocarbon |
1310 |
3.1 |
Adsorbing C grains causes hot pollution |
Filling with enough air |
| Hydrogen |
1290 |
3.1 |
Acting on SiC to form thus decrease SiO₂ protective film |
Active at dew point |
| Methane |
1370 |
3.1 |
Adsorbing C grains causes hot pollution |
|
| N |
1370 |
3.1 |
Acting with SiC forms SiN insulating layer |
|
| Na |
1310 |
3.8 |
Erosion of elements |
Protecting by quartz tube |
| SO₂ |
1310 |
3.8 |
Erosion of elements |
Protecting by quartz tube |
| Vacuum Atmosphere |
1204 |
3.8 |
|
|
| Oxygen |
1310 |
3.8 |
SiC is oxidized |
|
| Water (Different Contents) |
1090-1370 |
3.1-3.6 |
Acting on SiC forms hydrate of Silicon |
|
Industrial Applications
Magnetic materials processing and heat treatment
Powder metallurgy sintering furnaces
Technical ceramics production kilns
Glass melting and processing equipment
Metallurgical heat treatment furnaces
Industrial laboratory heating systems
Semiconductor manufacturing equipment
